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Titolo/Abstract/Parole chiave

ELECTRON DEVICE NONLINEAR MODELLING FOR MICROWAVE CIRCUIT DESIGN

Di Giacomo, Valeria (2009) ELECTRON DEVICE NONLINEAR MODELLING FOR MICROWAVE CIRCUIT DESIGN. Tesi di Dottorato , Università degli studi di Ferrara.

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    Abstract

    The electron device modelling is a research topic of great relevance, since the performances required to devices are continuously increasing in terms of frequency, power and linearity: new technologies are affirming themselves, bringing new challenges for the modelling community. In addition, the use of monolithic microwave integrated circuits (MMIC) is also increasing, making necessary the availability, in the circuit design phase, of models which are computationally efficient and at the same more and more accurate. The importance of modelling is even more evident by thinking at the wide area covered by microwave systems: terrestrial broadband, satellite communications, automotive applications, but also military industry, emergency prevention systems or medical instrumentations. This work contains a review of the empirical modelling approach, providing the description of some well-known equivalent-circuit and black-box models. In addition, an original modelling approach is described in details, together with the various possible applications: modelling of nonquasi-static phenomena as well as of low-frequency dispersive effects. A wide experimental validation is provided, for GaAs- and GaN-based devices. Other modelling issues are faced up, like the extraction of accurate models for Cold-FET or the more convenient choice of the data-interpolator in table-based models. Finally, the device degradation is also treated: a new measurement setup will be presented, aimed to the characterization of the device breakdown walkout under actual operating conditions for power amplifiers.

    Tipologia del documento:Tesi di Dottorato (Tesi di Dottorato)
    Data:20 Marzo 2009
    Relatore:Vannini, Giorgio
    Coordinatore ciclo:Trillo, Stefano
    Istituzione:Università degli studi di Ferrara
    Dottorato:XXI Anno 2006 > SCIENZE DELL'INGEGNERIA
    Struttura:Dipartimento > Ingegneria
    Soggetti:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
    Parole chiave:electron device modelling
    Depositato il:27 Lug 2009 12:03

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